Nonvolatile memory devices based on few-layer graphene films

초록

We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.

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