Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs

Nam, Jungsik; Kang, Chang Yong; Kim, Kwang Pyo; Yeo, Hyeopgoo; Lee, Boung Jun; Seo, Sungkyu; Yang, Ji-Woon

doi:10.1109/TNS.2012.2226751

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Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs

Nam, Jungsik;
Kang, Chang Yong;
Kim, Kwang Pyo;
Yeo, Hyeopgoo;
Lee, Boung Jun;
... Seo, Sungkyu;
... Yang, Ji-Woon

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12

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SCOPUS

15

초록

Effects of gamma-ray irradiation on short-channel effects (SCEs) in low-doped double-gate MOSFETs are experimentally examined for various fin widths and channel lengths. The different behavior of the effects in NMOS and PMOS devices are analyzed using three-dimensional (3-D) TCAD simulation. The physical interpretation for the influence of ionizing radiation on SCEs in low-doped multi-gate MOSFETs is provided. This successfully explains not only the degradation in NMOS, but also the improvement in PMOS for subthreshold characteristics by irradiation.

키워드

Double-gate MOSFETs; ionizing radiation; multi-gate MOSFETs; short-channel effects; total-ionizing dose

제목: Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs

저자: Nam, Jungsik; Kang, Chang Yong; Kim, Kwang Pyo; Yeo, Hyeopgoo; Lee, Boung Jun; Seo, Sungkyu; Yang, Ji-Woon

DOI: 10.1109/TNS.2012.2226751

발행일: 2012-12

유형: Article; Proceedings Paper

저널명: IEEE Transactions on Nuclear Science

권: 59

호: 6

페이지: 3021 ~ 3026