A 10 Gbits/s/pin DFE-Less Graphics DRAM Interface With Adaptive-Bandwidth PLL for Avoiding Noise Interference and CIJ Reduction Technique

  • Song, Junyoung
  • Lee, Hyun-Woo
  • Hwang, Sewook
  • Kim, Chulwoo
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초록

A 10 Gbits/s/pin graphics DRAM interface is developed in 65-nm CMOS technology. Several design techniques are proposed for high-speed operation in a noisy environment. A fast precharging data sampler guarantees high-speed sampling without the need for a decision feedback equalizer. In order to increase the data sampling margin, the PLL bandwidth is optimized depending on the system noises, which reduces the clock jitter by up to 55.1%. The crosstalk-induced jitter (CIJ) reduction technique suppresses the DQs jitter by employing the suggested training sequence for the GDDR5 interface. Pre- and de-emphasis are merged in one auxiliary driver. This chip operates at 10 Gbits/s/pin and exhibits a data eye opening of 0.78 UI with the CIJ reduction technique. The power consumptions of the TX and RX are 8.28 and 5.5 pJ/b/channel, respectively.

키워드

Adaptive-bandwidth PLLcrosstalk-induced jitter (CIJ) reductionfast precharging sampler (FP-sampler)graphics DRAM interfaceintersymbol interference (ISI) reductionpre-and de-emphasisreceivertraining sequenceSILICON
제목
A 10 Gbits/s/pin DFE-Less Graphics DRAM Interface With Adaptive-Bandwidth PLL for Avoiding Noise Interference and CIJ Reduction Technique
저자
Song, JunyoungLee, Hyun-WooHwang, SewookKim, Chulwoo
DOI
10.1109/TVLSI.2016.2580713
발행일
2017-01
유형
Article
저널명
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
25
1
페이지
344 ~ 353