Enhanced short-circuit current density in epitaxial InGaP/GaAs/Si triple-junction solar cells enabled by wide bandgap n-AlGaAs buffers

초록

Epitaxial integration of III-V solar cells on a silicon substrate offers large-scale, relatively low-fabrication cost, and high-efficiency photovoltaics. However, challenges remain in realizing wide bandgap III-V buffers with low threading dislocation density (TDD) and low parasitic absorption. To address the issues, we explore the epitaxial growth of n-AlxGa1-xAs (x = 0, 0.05, 0.10) buffers on Si to enhance short-circuit current (Jsc) of the III-V/Si tandem cells. Photoluminescence measurements confirm an increased bandgap of 1.55 eV for n-Al0.10Ga0.90As buffer. Higher Al composition increases the TDD while the buffer roughness remains almost constant. Notably, the 1.55 eV n-AlGaAs buffer achieves a TDD of 2.5 x 107cm-2 with two asymmetric step-graded filters. As a proof of concept, GaAs/Si tandem and InGaP/GaAs/Si triple-junction cells achieve enhanced Jscof 8.0 and 8.5 mA/cm2, respectively. This study demonstrates the feasibility of high bandgap n-AlxGa1-xAs buffers to enhance the Jscin Si bottom cells, advancing the development of high-efficiency, low-cost III-V/Si multi-junction solar cells.

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