상세 보기
Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods
- Kim, Doyoon;
- Kim, Sooyeon;
- Song, Kiryong;
- Kim, Jungsoo;
- Yoo, Junghwan;
- ... Rieh, Jae-Sung
Citations
WEB OF SCIENCE
5Citations
SCOPUS
6초록
A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.
키워드
Noise; Y-factor method; N-times power method; 65 nm CMOS; Low-noise amplifier
- 제목
- Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods
- 저자
- Kim, Doyoon; Kim, Sooyeon; Song, Kiryong; Kim, Jungsoo; Yoo, Junghwan; Rieh, Jae-Sung
- 발행일
- 2018-08
- 유형
- Article
- 권
- 18
- 호
- 4
- 페이지
- 536 ~ 540
- 언어
- ENG
- 출판사
- IEEK PUBLICATION CENTER
- 발행국가
- 대한민국
- 분량
- 5 페이지
- ISSN
- E 2233-4866
P 1598-1657