Impact of series resistance on the operation of junctionless transistors

Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard

doi:10.1016/j.sse.2016.12.004

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Impact of series resistance on the operation of junctionless transistors

Jeon, Dae-Young;
Park, So Jeong;
Mouis, Mireille;
Barraud, Sylvain;
Kim, Gyu-Tae;
외 1명

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초록

Transconductance (g(m)) and its derivative (dg(m)/dV(g)) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (R-sd) causes significant degradation of intrinsic g(m) and dg(m)/dV(g) behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded R-sd effects. (C) 2016 Elsevier Ltd. All rights reserved.

키워드

Junctionless transistors (JLTs); Bulk neutral conduction; Series resistance (R-sd); Analytical modeling; De-embedded Rsd effects; NANOWIRE TRANSISTORS; NM

제목: Impact of series resistance on the operation of junctionless transistors

저자: Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard

DOI: 10.1016/j.sse.2016.12.004

발행일: 2017-03

유형: Article

저널명: Solid-State Electronics

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