The silicon Schottky diode on flexible substrates by transfer method

초록

A flexible silicon barrier diode was fabricated by the transfer printing method. Micro-line patterned p-type single crystalline silicon membranes were created from a silicon on insulator wafer. The dark current of our device was very low, about 1 pA for reverse bias voltages up to 5 V, and showed rectifying behavior with an ideality factor of 1.05. The photo-response and the responsivity was 32 and 0.3 A/W, respectively, for light intensity of 1.2 mW/cm(2). Also, the current of the photodetector changed under compressive stress or tensile stress. Our device is functional as the piezotronic sensor as well as the photodetector. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776685]

키워드