Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure

Yoo, Jai Seung; Park, Yung Woo; Skakalova, Viera; Roth, Siegmar

doi:10.1063/1.3380616

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Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure

Yoo, Jai Seung;
Park, Yung Woo;
Skakalova, Viera;
Roth, Siegmar

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WEB OF SCIENCE

21

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SCOPUS

21

초록

We observed the Shubnikov-de Haas and the Aharonov Bohm oscillations in a graphene nanoring structure of 1 mu m in diameter and with a 125 nm channel width. We found a separation of 2 Delta V-g=17.5 V between electron and hole Landau levels in the plot of longitudinal resistance as a function of gate voltage and magnetic field. This separation can be understood as a result of the transport gap, Delta V-t=20 V, in the density of state. The Aharonov Bohm effect was observed in magnetoconductance with poor visibility because of the short phase coherence length of the graphene nanoring structure.

키워드

Aharonov-Bohm effect; electronic density of states; graphene; Landau levels; magnetoresistance; nanostructured materials; QUANTUM; CARBON

제목: Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure

저자: Yoo, Jai Seung; Park, Yung Woo; Skakalova, Viera; Roth, Siegmar

DOI: 10.1063/1.3380616

발행일: 2010-04-05

유형: Article

저널명: Applied Physics Letters

권: 96

호: 14