Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers

초록

In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (similar to 10(5)) at a read voltage of 0.4 V, and highly stable low-and high-resistive state operation for 100 direct-current sweep cycles.

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