Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

  • Kim, Byung-Jae
  • Lee, Chongmin
  • Jung, Younghun
  • Baik, Kwang Hyeon
  • Mastro, Michael A.
  • 외 3명
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초록

We report on the development of a large-area few-layer graphene (FLG)-based transparent conductive electrode as a current spreading layer for GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Large-area FLG was deposited on Cu using the chemical vapor deposition (CVD) method and subsequently transferred to the surface of the UV LED. UV light at a peak of 372 nm was emitted through the FLG-based transparent conductive electrode. The current spreading effects of FLG were clearly evident in both the optical images of electroluminescence (EL) and current-voltage (I-V) characteristics. Degradation of the FLG-based transparent conductive electrode could be induced by high power operation. Our results indicate that a large-area FLG-based electrode on GaN offers excellent current spreading and ultra-violet transparency properties when compared to the standard optoelectronic indium tin oxide (ITO) contact layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644496]

키워드

chemical vapour depositionelectroluminescencegallium compoundsgrapheneIII-V semiconductorslight emitting diodestransparencywide band gap semiconductorsSINGLE-LAYERFILMS
제목
Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
저자
Kim, Byung-JaeLee, ChongminJung, YounghunBaik, Kwang HyeonMastro, Michael A.Hite, Jennifer K.Eddy, Charles R., Jr.Kim, Jihyun
DOI
10.1063/1.3644496
발행일
2011-10-03
유형
Article
저널명
Applied Physics Letters
99
14