Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique

Sahoo, Trilochan; Kang, Eun-Sil; Kim, Myoung; Kannan, Vasudevan; Yu, Yeon-Tae; Shin, Dong-Chan; Kim, Tae-Geun; Lee, In-Hwan

doi:10.1016/j.jcrysgro.2007.11.026

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Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique

Sahoo, Trilochan;
Kang, Eun-Sil;
Kim, Myoung;
Kannan, Vasudevan;
Yu, Yeon-Tae;
... Kim, Tae-Geun;
외 2명

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초록

Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0001) by single-step hydrothermal route at a low temperature of 90 degrees C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0001) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [11 (2) over bar0](ZnO)parallel to[11 (2) over bar0](GaN). Sharp luminescence peak centered at 377nm due to excitonic recombination from ZnO thin film was observed. (C) 2007 Elsevier B.V. All rights reserved.

키워드

crystal structure; X-ray diffraction; hydrothermal crystal growth; thin film; zinc compounds; semiconducting II-VI materials; EPITAXIAL-GROWTH; TEMPERATURE; DEPOSITION; MORPHOLOGY; NANORODS

제목: Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique

저자: Sahoo, Trilochan; Kang, Eun-Sil; Kim, Myoung; Kannan, Vasudevan; Yu, Yeon-Tae; Shin, Dong-Chan; Kim, Tae-Geun; Lee, In-Hwan

DOI: 10.1016/j.jcrysgro.2007.11.026

발행일: 2008-02-01

유형: Article

저널명: Journal of Crystal Growth

권: 310

호: 3

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