High hysteresis and distinctive optoelectronic memory effect for ambipolar thin-film transistors using a conjugated polymer having donor-acceptor heterojunction

초록

pi-Conjugated p-type PBDB-T and n-type N2200 macromolecular units are alternatively bonded to generate ambipolar copolymer (i.e. P(BDBT-co-N2200)) for achieving donor-acceptor (D-A) heterojunction. From the laser confocal microscope photoluminescence (PL) spectra of the P(BDBT-co-N2200) copolymer, PL characteristic peaks of PBDB-T and N2200 are simultaneously observed at 695, 760, and 860 nm. The thin-film transistors (TFTs) using P(BDBT-co-N2200) copolymer show ambipolar transistor characteristics originating from the coexistence of p-type and n-type semiconducting macromolecular units. Interestingly, a high hysteresis is observed in the transfer and output characteristics of the TFTs because of the interface traps and near-interface bulk traps. Under light irradiation, distinctive photocurrents and hysteresis are observed, suggesting the optically mediated charge release and photogating effects caused by trap states. Charge trapping with a high hysteresis and photoconduction with the photogating effect of the P(BDBT-co-N2200)-based ambipolar TFTs induce stable and repeatable writing, reading, and erasing operations. The optoelectronic memory devices using the P(BDBT-co-N2200)-based ambipolar TFTs are realized with the merit of a long charge storage time of 40 s. The pi-conjugated copolymer, P(BDBT-co-N2200) exhibiting D-A heterojunction, can be applied to multifunctional devices, such as photoresponsive ambipolar transistors and optoelectronic memory devices, for image sensing and data storage.

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