Assessment of the (010) beta-Ga2O3 surface and substrate specification

초록

Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (beta -Ga2O3) have led to the commercialization of large-area beta -Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) beta -Ga2O3 surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of beta -Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.

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