Microstructural evolution and electrical resistivity of nanocrystalline W thin films grown by sputtering

초록

Tungsten (W) thin films and nanostructures, particularly those having a beta (beta)-phase, have attracted a large amount of attention lately because an ultrathin beta-phase W film attached to a ferromagnetic layer can reverse the direction of magnetization upon current injection. However, in-depth microstructural studies including the phase transformation in W films as a function of thickness and post-deposition heat treatment temperature are rare. Here, we report the microstructural evolution and the change in the electrical resistivity of W films with thicknesses of 5-40 nm. Microstructural analyses indicate that the beta-W is nanocrystalline with a small grain size of about 5 nm, while the alpha (alpha)-W has a grain size larger than 130 nm with random crystal orientation. We present a state diagram showing the phase of the W film as functions of film thickness and annealing temperature.

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