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Gate-tunable silicon oxide memory based on vertically integrated graphene barristor
Gate-tunable silicon oxide memory based on vertically integrated graphene barristor
- 제목
- Gate-tunable silicon oxide memory based on vertically integrated graphene barristor
- 제목 (타언어)
- Gate-tunable silicon oxide memory based on vertically integrated graphene barristor
- 저자
- Gunuk Wang
- 발행일
- 2018-02-05
- 학회명
- The 25th Korean Conference on Semiconductor
- 개최국가
- 대한민국
- 학회 개최일
- 2018-02-05 ~ 2018-02-07