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Microwave Characterization of a Field Effect Transistor with Dielectrophoretically-Aligned Single Silicon Nanowire
- Kang, Myung-Gil;
- Ahn, Jae-Hyun;
- Lee, Jongwoon;
- Hwang, Dong-Hoon;
- Kim, Hee-Tae;
- ... Rieh, Jae-Seong;
- 외 5명
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8초록
Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived. (C) 2010 The Japan Society of Applied Physics
키워드
WALLED CARBON NANOTUBES; CHEMICAL SENSORS; GRAPHENE; PERFORMANCE; TRANSPORT; GROWTH; ARRAYS; VAPOR
- 제목
- Microwave Characterization of a Field Effect Transistor with Dielectrophoretically-Aligned Single Silicon Nanowire
- 저자
- Kang, Myung-Gil; Ahn, Jae-Hyun; Lee, Jongwoon; Hwang, Dong-Hoon; Kim, Hee-Tae; Rieh, Jae-Seong; Whang, Dongmok; Son, Maeng-Ho; Ahn, Doyeol; Yu, Yun-Seop; Hwang, Sung-Woo
- 발행일
- 2010
- 유형
- Article; Proceedings Paper
- 권
- 49
- 호
- 6
- 언어
- ENG
- 출판사
- JAPAN SOC APPLIED PHYSICS
- 발행국가
- 일본
- ISSN
- E 1347-4065
P 0021-4922