Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

초록

A detailed electrical characterization and transistor parameter extraction on 200 mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main transistor parameters (threshold voltage V-th, low-field mobility mu(0), subthreshold swing SS, source-drain series resistance R-sd) were extracted in linear region using the Y-function and the Lambert-W function methods for gate lengths down to 0.1 mu m. The Y-function method was also employed in saturation region for the extraction of the saturation velocity. The results indicate that these GaN/Si HEMT devices demonstrate a very good functionality down to very low temperature with improvement of mobility and subthreshold slope. It was also shown by TLM analysis that the source-drain series resistance R-sd is more limited by the contact resistance than by the 2DEG access region resistance as temperature is lowered.

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