Memristor-Driven Active-Matrix Organic Light-Emitting Diode for Energy Efficient and High-Resolution Displays

초록

Recent advances in wearable electronics, augmented and virtual reality systems, and head-up displays have increased the demand for display technologies offering ultra-high pixel density, flexible form factors, and low power consumption. Organic light-emitting diodes (OLEDs) are well suited to these requirements due to their self-emissive operation, high contrast ratios, and excellent color fidelity. However, conventional active-matrix (AM) pixel architectures based on one-transistor-one-capacitor (1T-1C) configurations suffer from high driving voltages, increased dynamic power loss, and large capacitor footprints. Here, we present a germanium telluride (GT) memristor-driven AMOLED system that replaces the conventional driving 1T-1C architecture with a single two-terminal memristor capable of nonvolatile resistance switching. The fabricated GT memristors exhibit ultralow switching voltages below +/- 0.2 V, low steady-state power consumption of similar to 200 nW at 10 & micro;A, and stable resistance retention exceeding 103 s. Excellent temporal and thermal stability is achieved, and a 10 & times; 10 memristor-driven OLED array successfully demonstrates capacitor-free AM operation. Moreover, multilevel resistance states enable continuous and precise control of OLED luminance, providing a scalable pathway toward energy-efficient, high-resolution display technologies for next-generation portable electronics.

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