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Structural and electrical properties of high-quality 0.41 mu m-thick InSb films grown on GaAs (100) substrate with InxAl1-xSb continuously graded buffer
- Shin, Sang Hoon;
- Song, Jin Dong;
- Lim, Ju Young;
- Koo, Hyun Cheol;
- Kim, Tae Geun
Citations
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8초록
High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 mu m-thick InSb was 46,300 cm(2)/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.
키워드
Semiconductors; Thin films; Epitaxial growth; Defects; Electrical properties; MOLECULAR-BEAM EPITAXY; SEMICONDUCTORS; MAGNETORESISTANCE; PHOTODETECTORS; INTERFACES; SENSORS; DEVICES; LAYERS
- 제목
- Structural and electrical properties of high-quality 0.41 mu m-thick InSb films grown on GaAs (100) substrate with InxAl1-xSb continuously graded buffer
- 저자
- Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun
- 발행일
- 2012-10
- 유형
- Article; Proceedings Paper
- 권
- 47
- 호
- 10
- 페이지
- 2927 ~ 2930
- 언어
- ENG
- 출판사
- PERGAMON-ELSEVIER SCIENCE LTD
- 발행국가
- 영국
- 분량
- 4 페이지
- ISSN
- E 1873-4227
P 0025-5408