상세 보기
STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- 제목
- STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- 제목 (타언어)
- STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- 저자
- Donghun Lee
- 발행일
- 2009-04-22
- 학회명
- 55th Midwest Solid State Conference
- 개최국가
- 미국
- 학회 개최일
- 2009-04-22 ~ 2009-04-22