Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl-2/Ar inductively coupled plasma

초록

An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl-2/Ar inductively coupled plasma was carried Out. It Was found that an increase in At mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together. (C) 2008 Elsevier B.V. All rights reserved.

키워드