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Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode
Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode
- 제목
- Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode
- 제목 (타언어)
- Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode
- 저자
- BYUN, Dong Jin
- 발행일
- 2018-05-18
- 학회명
- 2018년도 학국재료학회 춘계학술대회
- 개최국가
- 대한민국
- 학회 개최일
- 2018-05-16 ~ 2018-05-18