Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

  • Jeon, Youngin; 
  • Lee, Myeongwon; 
  • Kim, Minsuk; 
  • Kim, Yoonjoong; 
  • Kim, Sangsig
Citations

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2
Citations

SCOPUS

3

초록

In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of similar to 0.2 nW (or similar to 6.6 pW). The low-power inverting operation with a voltage gain of similar to 18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and -0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.

키워드

silicon nanowire; inverter; low-power functionality; bendable electronics; THIN-FILM TRANSISTORS; GAAS NANOWIRES; RIBBONS; ELECTRONICS; PHOTONICS; MOSFETS
제목
Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics
저자
Jeon, Youngin; Lee, Myeongwon; Kim, Minsuk; Kim, Yoonjoong; Kim, Sangsig
DOI
10.1007/s12274-016-1036-7
발행일
2016-05
유형
Article
저널명
Nano Research
권
9
호
5
페이지
1409 ~ 1417