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Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process
- Park, Ju Hyun;
- Kim, Hee-Dong;
- Hong, Seok Man;
- Yun, Min Ju;
- Jeon, Dong Su;
- ... Kim, Tae Geun
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21초록
The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O-2)-based ReRAM cells show a lower current (approximate to 0.3 A) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O-2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
키워드
resistive switching; ReRAM; silicon nitride; charge trapping; silicon; dangling bonds; NITRIDE
- 제목
- Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process
- 저자
- Park, Ju Hyun; Kim, Hee-Dong; Hong, Seok Man; Yun, Min Ju; Jeon, Dong Su; Kim, Tae Geun
- 발행일
- 2014-03
- 유형
- Article
- 권
- 8
- 호
- 3
- 페이지
- 239 ~ 242