Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs

Kim, DukSoo; Jung, YoungChai; Park, MiYoung; Kim, ByungSung; Hong, SuHeon; Choi, MinSu; Kang, MyungGil; Yu, YunSeop; Whang, Dongmok; Hwang, SungWoo

doi:10.1109/TNANO.2008.2005636

상세 보기

Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs

Kim, DukSoo;
Jung, YoungChai;
Park, MiYoung;
Kim, ByungSung;
Hong, SuHeon;
외 5명

Citations

WEB OF SCIENCE

10

Citations

SCOPUS

9

초록

We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.

키워드

Back gate; contact resistance; mobility extraction; silicon nanowire (SiNW) FET; FIELD-EFFECT TRANSISTORS; TEMPERATURE-DEPENDENCE; CARBON NANOTUBES

제목: Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs

저자: Kim, DukSoo; Jung, YoungChai; Park, MiYoung; Kim, ByungSung; Hong, SuHeon; Choi, MinSu; Kang, MyungGil; Yu, YunSeop; Whang, Dongmok; Hwang, SungWoo

DOI: 10.1109/TNANO.2008.2005636

발행일: 2008-11

유형: Article; Proceedings Paper

저널명: IEEE Transactions on Nanotechnology

권: 7

호: 6

페이지: 683 ~ 687