Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study

  • Wang, T. X.
  • Li, Y.
  • Lee, K. J.
  • Cho, J. U.
  • Kim, D. K.
  • ... Kim, Y. K.
  • 외 1명
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초록

The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575337]

키워드

ROOM-TEMPERATUREMAGNETORESISTANCETRANSPORT
제목
Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study
저자
Wang, T. X.Li, Y.Lee, K. J.Cho, J. U.Kim, D. K.Noh, S. J.Kim, Y. K.
DOI
10.1063/1.3575337
발행일
2011-04-15
유형
Article
저널명
Journal of Applied Physics
109
8