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Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

  • Hwang, Sung Woo
제목
Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics
저자
Hwang, Sung Woo
학회명
IEDM Technical Digest 1998
개최지
IEDM Technical Digest 1998
학회 개최일
1998-12-06

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