Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Kim, K. H.; Gul, R.; Carcelen, V.; Bolotinkov, A. E.; Carmarda, G. S.; Yang, G.; Hossain, A.; Cui, Y.; James, R. B.; Hong, J.; Kim, S. U.

doi:10.1016/j.jcrysgro.2009.11.069

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Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

Kim, K. H.;
Gul, R.;
Carcelen, V.;
Bolotinkov, A. E.;
Carmarda, G. S.;
... Hong, J.;
외 5명

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초록

Semi-insulating Cd(0.9)Zn(0.1)Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 degrees C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a (137)Cs radioactive source, gave an energy resolution of 2.5%. (C) 2009 Elsevier B.V. All rights reserved.

키워드

Doping; Point defects; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials; CDTE; DETECTORS; IRRADIATION; CRYSTALS

제목: Defect levels and thermomigration of Te precipitates in CdZnTe:Pb

저자: Kim, K. H.; Gul, R.; Carcelen, V.; Bolotinkov, A. E.; Carmarda, G. S.; Yang, G.; Hossain, A.; Cui, Y.; James, R. B.; Hong, J.; Kim, S. U.

DOI: 10.1016/j.jcrysgro.2009.11.069

발행일: 2010-03-01

유형: Article

저널명: Journal of Crystal Growth

권: 312

호: 6

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