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New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors
- Jeon, Dae-Young;
- Park, So Jeong;
- Mouis, Mireille;
- Barraud, Sylvain;
- Kim, Gyu-Tae;
- 외 1명
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13초록
A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (mu(bulk)) and flat-band voltage (V-fb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/g(m)(2)) vs gate voltage in the partially depleted operation regime (V-th < V-fb < V-fb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for g(m) of JLT devices. (C) 2013 Elsevier Ltd. All rights reserved.
키워드
Junctionless transistors (JLTs); Extraction method; Bulk channel mobility; Flat-band voltage; 2D numerical simulation; Maserjian's-like function for g(m); NANOWIRE TRANSISTORS; MOS STRUCTURES; SILICON
- 제목
- New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors
- 저자
- Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard
- 발행일
- 2013-11
- 유형
- Article
- 권
- 89
- 페이지
- 139 ~ 141
- 언어
- ENG
- 출판사
- PERGAMON-ELSEVIER SCIENCE LTD
- 발행국가
- 영국
- 분량
- 3 페이지
- ISSN
- E 1879-2405
P 0038-1101