Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors

초록

In this article, we present a transposable three-transistor static random access memory (3T-SRAM) array consisting of independent double-gate feedback field-effect transistors as binary synaptic devices and access transistors. The synaptic functions of the $2\times 2$ SRAM array are investigated through mixed-mode technology computer-aided design simulations. This 3T-SRAM array provides parallel and bidirectional synaptic updates with fast operating speed. Furthermore, a simplified spike-timing-dependent plasticity learning rule is implemented by adjusting the widths of memory pulses. A compact cell area and a low-leakage power consumption allow this 3T-SRAM array to be used for adaptive synaptic devices in a large-scale neuromorphic system.

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