Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy

  • Li, Xiang; 
  • Liu, Xinyu; 
  • Dong, Sining; 
  • Gorsak, Cameron; 
  • Furdyna, Jacek K.; 
  • ... Lee, Sanghoon; 
  • 외 3명
Citations

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14
Citations

SCOPUS

14

초록

A series of Ga1-xMnxAs1-yPy thin films grown on GaAs (100) substrates by molecular beam epitaxy were systematically investigated to establish the effect of phosphorous on structural and magnetic properties of the alloy. Detailed characterization of both as-grown and annealed samples by x-ray diffraction and magnetometry were carried out. Reciprocal space map scans confirmed that the quaternary alloy is fully strained by the substrate throughout its thickness. Magnetization measurements revealed a clear trend of decreasing Curie temperature with increasing P concentration, and revealed that the magnetic easy axis gradually turns from in-plane to out-to-plane orientation as P concentration increases. Published by the AVS.

키워드

MAGNETIC-ANISOTROPY; SEMICONDUCTORS; LAYERS; GAP
제목
Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy
저자
Li, Xiang; Liu, Xinyu; Dong, Sining; Gorsak, Cameron; Furdyna, Jacek K.; Dobrowolska, Margaret; Bac, Seul-Ki; Lee, Sanghoon; Rouvimov, Sergei
DOI
10.1116/1.5014055
발행일
2018-03
유형
Article
저널명
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
권
36
호
2