Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

  • Yim, H. I.
  • Lee, S. Y.
  • Hwang, J. Y.
  • Rhee, J. R.
  • Chun, B. S.
  • ... Kim, Y. K.
  • 외 4명
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키워드

ROOM-TEMPERATUREMAGNETORESISTANCE
제목
Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers
저자
Yim, H. I.Lee, S. Y.Hwang, J. Y.Rhee, J. R.Chun, B. S.Wang, K. L.Kim, Y. K.Kim, T. W.Lee, S. S.Hwang, D. G.
DOI
10.1002/pssa.200723639
발행일
2008-08
유형
Article; Proceedings Paper
저널명
physica status solidi (a) - applications and materials science
205
8
페이지
1847 ~ 1850