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Characteristics of GaN epilayer on N+-ion-implanted Si(111) substrate by MOCVD
- 제목
- Characteristics of GaN epilayer on N+-ion-implanted Si(111) substrate by MOCVD
- 저자
- BYUN, Dong Jin
- 학회명
- The 3rd International Conference on Advanced Materials and Devices
- 개최지
- Jeju, Korea
- 학회 개최일
- 2003-12-10 ~ 2003-12-12