Printed Nanolaser on Silicon

  • Lee, Jungmin; 
  • Karnadi, Indra; 
  • Kim, Jin Tae; 
  • Lee, Yong-Hee; 
  • Kim, Myung-Ki
Citations

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51
Citations

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55

초록

We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 mu m, 88% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.

키워드

silicon photonics; III-V/Si integration; nanolasers; photonic crystals; silicon waveguides; photonic integrated circuits; QUANTUM-DOT LASERS; ON-CHIP; NANOCAVITY; PHOTONICS
제목
Printed Nanolaser on Silicon
저자
Lee, Jungmin; Karnadi, Indra; Kim, Jin Tae; Lee, Yong-Hee; Kim, Myung-Ki
DOI
10.1021/acsphotonics.7b00488
발행일
2017-09
유형
Article
저널명
ACS Photonics
권
4
호
9
페이지
2117 ~ 2123