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SiGe HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps
- 제목
- SiGe HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps
- 저자
- Rieh, Jae-Sung
- 학회명
- International Electron Devices Meeting
- 학회 개최일
- 2004-12-13 ~ 2004-12-15