Crystalline Ge quantum dots embedded in SiO2 matrix synthesized by plasma immersion ion implantation

초록

A new plasma process, i.e. a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces. The new process has the great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this study, Ge ions were successfully implanted into SiO2 thin film, which resulted in uniformly and homogeneously distributed crystalline Ge quantum dots (Ge-QDs) embedded in a SiO2 matrix even without a further annealing process. Broader areas of application of PIII&D technology are envisaged with this newly developed process.

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