Metal Capping on Silicon Indium Zinc Oxide Semiconductor for High Performance Thin Film Transistors Processed at 150 degrees C

초록

We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 degrees C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (mu(FE)) showed 21.4 cm(2)/V s, and V-th shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.

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