The Island-Gate Varactor-A High-Q MOS Varactor for Millimeter-Wave Applications

초록

A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance R. over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.

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