Systematic analysis of optical constants in IGZO thin films under controlled oxygen partial pressure and working pressure

  • Ahn, Insoo; 
  • Shin, Dong Yeol; 
  • Jeong, Pangyun; 
  • Hu, Yuehua; 
  • Kong, Jiyeong; 
  • ... Ju, Byeong-Kwon; 
  • 외 4명
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초록

This study investigates the optical properties of nine indium gallium zinc oxide thin films deposited under three oxygen partial pressures (OPP) (10%, 30%, 50%) and three working pressures (2, 5, 10 mTorr). Spectroscopic ellipsometry (SE) data were analyzed with the Cauchy-Urbach (CU) model to extract refractive index (n), extinction coefficient (k), and dielectric functions (epsilon(1), epsilon(2)). Thicknesses derived from SE agreed with stylus profiler measurements within 10%, confirming the CU model's reliability. Both n and k decreased with increasing working pressure, reflecting reduced electron density due to fewer oxygen vacancies. While n varied <1% at 623 nm across the OPP range, k and epsilon(2) were highly sensitive to oxygen incorporation, decreasing by similar to 54% at 623 nm as OPP increased from 10% to 50%. These results indicate that higher OPP and working pressures suppress oxygen-vacancy-induced sub-gap states, thereby lowering optical absorption in the visible range.

키워드

IGZO; refractive index; ellipsometry; oxygen partial pressure; working pressure; ELECTRICAL-PROPERTIES; TRANSISTORS; DEPOSITION
제목
Systematic analysis of optical constants in IGZO thin films under controlled oxygen partial pressure and working pressure
저자
Ahn, Insoo; Shin, Dong Yeol; Jeong, Pangyun; Hu, Yuehua; Kong, Jiyeong; Yang, Chanwoo; Ryu, Huijin; Yoo, Kyunghoon; Ju, Byeong-Kwon; Kang, Kyung-Tae
DOI
10.35848/1347-4065/ae312c
발행일
2026-01-14
유형
Article
저널명
Japanese Journal of Applied Physics
권
65
호
1