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Design and Analysis of Insulated Gate Bipolar Transistor (IGBT) with P+/SiO2 Collector Structure Applicable to High Voltage to 1700V

  • Sung, Man Young
제목
Design and Analysis of Insulated Gate Bipolar Transistor (IGBT) with P+/SiO2 Collector Structure Applicable to High Voltage to 1700V
저자
Sung, Man Young
학회명
The 2006 IEEE International Conference on Semiconductor Electronics

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