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Series resistance in different operation regime of junctionless transistors
- Jeon, Dae-Young;
- Park, So Jeong;
- Mouis, Mireille;
- Barraud, Sylvain;
- Kim, Gyu-Tae;
- 외 1명
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3초록
Operation mode dependent series resistance (R-sd) behavior of junctionless transistors (JLTs) has been discussed in detail. R-sd was increased for decreasing gate bias in bulk conduction regime, while a constant value of R-sd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted R-sd. This work provides key information for a better understanding of JLT operation affected by R-sd effects with different state of conduction channel.
키워드
Junctionless transistors (JLTs); Series resistance (R-sd); Bulk channel; Accumulation channel; Numerical simulation and temperature dependence; NANOWIRE TRANSISTORS; PARAMETER EXTRACTION
- 제목
- Series resistance in different operation regime of junctionless transistors
- 저자
- Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gerard
- 발행일
- 2018-03
- 유형
- Article
- 권
- 141
- 페이지
- 92 ~ 95
- 언어
- ENG
- 출판사
- PERGAMON-ELSEVIER SCIENCE LTD
- 발행국가
- 영국
- 분량
- 4 페이지
- ISSN
- E 1879-2405
P 0038-1101