Gas sensing properties of defect-controlled ZnO-nanowire gas sensor

  • Ahn, M. -W.
  • Park, K. -S.
  • Heo, J. -H.
  • Park, J. -G.
  • Kim, D. -W.
  • 외 3명
Citations

WEB OF SCIENCE

692
Citations

SCOPUS

726

초록

The effect of oxygen-vacancy-related defects on gas-sensing properties of ZnO-nanowire gas sensors was investigated. Gas sensors were fabricated by growing ZnO nanowires bridging the gap between two prepatterned Au catalysts. The sensor displayed fast response and recovery behavior with a maximum sensitivity to NO2 gas at 225 degrees C. Gas sensitivity was found to be linearly proportional to the photoluminescence intensity of oxygen-vacancy-related defects in both as-fabricated and defect-controlled gas sensors by postannealing in Ar and H-2 atmosphere. This result agrees well with previous theoretical prediction that oxygen vacancies play a role of preferential adsorption sites for NO2 molecules.

키워드

adsorptionannealingcatalystsgas sensorsgoldII-VI semiconductorsnanotechnologynanowiresphotoluminescencevacancies (crystal)wide band gap semiconductorszinc compoundsTHIN-FILMSNO2EMISSIONFIELD
제목
Gas sensing properties of defect-controlled ZnO-nanowire gas sensor
저자
Ahn, M. -W.Park, K. -S.Heo, J. -H.Park, J. -G.Kim, D. -W.Choi, K. J.Lee, J. -H.Hong, S. -H.
DOI
10.1063/1.3046726
발행일
2008-12-29
유형
Article
저널명
Applied Physics Letters
93
26