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Postannealing effect of GaN on reactive ion beam pretreated sapphire
- 제목
- Postannealing effect of GaN on reactive ion beam pretreated sapphire
- 저자
- BYUN, Dong Jin
- 학회명
- International Symposium on the Physics of Semiconductors and Applications-2000( Abstracts of The 10th Seoul)
- 개최지
- Cheju, Korea
- 학회 개최일
- 2000-11-01 ~ 2000-11-03