Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations

초록

High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (similar to 3300 cm(2) V-1 s(-1)), large I-on/I-off ratio (similar to 10(8)) and small subthreshold swing (similar to 70 mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100 MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.

키워드