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Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2
- Seo, Yujin;
- Lee, Tae In;
- Ahn, Hyun Jun;
- Moon, Jungmin;
- Hwang, Wan Sik;
- ... Yu, Hyun-Yong;
- 외 1명
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5Citations
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6초록
A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.
키워드
Fermi-level pinning (FLP); germanium; Schottky barrier height (SBH); titanium oxide; OVERLAYER THICKNESS; CONTACT RESISTIVITY; DIFFUSION; OXYGEN; REDUCTION; TITANIUM; LAYER; XPS
- 제목
- Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2
- 저자
- Seo, Yujin; Lee, Tae In; Ahn, Hyun Jun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin
- 발행일
- 2017-10
- 유형
- Article
- 권
- 64
- 호
- 10
- 페이지
- 4242 ~ 4245
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1557-9646
P 0018-9383