Nature of luminescence and strain in gallium nitride nanowires

Mastro, M. A.; Maximenko, S.; Gowda, M.; Simpkins, B. S.; Pehrsson, P. E.; Long, J. P.; Makinen, A. J.; Freitas, J. A., Jr.; Hite, J. K.; Eddy, C. R., Jr.; Kim, J.

doi:10.1016/j.jcrysgro.2009.01.053

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Nature of luminescence and strain in gallium nitride nanowires

Mastro, M. A.;
Maximenko, S.;
Gowda, M.;
Simpkins, B. S.;
Pehrsson, P. E.;
외 6명

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8

초록

Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission. Published by Elsevier B.V.

키워드

Stresses; Gallium compounds; Nanomaterials; Semiconducting gallium compounds; GROWTH; GAN; NANOHETEROEPITAXY; SI

제목: Nature of luminescence and strain in gallium nitride nanowires

저자: Mastro, M. A.; Maximenko, S.; Gowda, M.; Simpkins, B. S.; Pehrsson, P. E.; Long, J. P.; Makinen, A. J.; Freitas, J. A., Jr.; Hite, J. K.; Eddy, C. R., Jr.; Kim, J.

DOI: 10.1016/j.jcrysgro.2009.01.053

발행일: 2009-05-01

유형: Article; Proceedings Paper

저널명: Journal of Crystal Growth

권: 311

호: 10

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