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Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
- Hong, Chan-Hwa;
- Shin, Jae-Heon;
- Park, Nae-Man;
- Kim, Kyung-Hyun;
- Kim, Bo-Sul;
- ... Ju, Byeong-Kwon;
- 외 4명
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2초록
In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.
키워드
TOO; IPVD; Ti-Doped ITO; ICP; OXIDE THIN-FILMS; LIGHT-EMITTING-DIODES; INDIUM; DEPOSITION; DC; DEPENDENCE; COATINGS; OXYGEN
- 제목
- Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
- 저자
- Hong, Chan-Hwa; Shin, Jae-Heon; Park, Nae-Man; Kim, Kyung-Hyun; Kim, Bo-Sul; Song, Chang-Woo; Yang, Ji-Woong; Seo, Woo-Hyung; Ju, Byeong-Kwon; Cheong, Woo-Seok
- 발행일
- 2015-10
- 유형
- Article
- 권
- 15
- 호
- 10
- 페이지
- 8099 ~ 8102
- 언어
- ENG
- 출판사
- AMER SCIENTIFIC PUBLISHERS
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1533-4899
P 1533-4880