Memory Interfaces: Past, Present, and Future

Citations

SCOPUS

16

초록

Over the last few decades, the bandwidth of dynamic random-access memory (DRAM) has increased significantly through innovative architectures and circuit-level techniques to overcome the well-known memory wall problem. We can understand the past challenges of DRAM input/output (I/O) by investigating the technologies utilized for DRAM I/O in the transition from single-data-rate (SDR) synchronous DRAM (SDRAM)to double-data-rate (DDR) SDRAM. Recently developed versions of low-power DDR four (LPDDR4) and synchronous graphics DDR five (GDDR5) employ new I/O features for further bandwidth increase. Looking beyond LPDDR4 and GDDR5, what should be done to make another jump in bandwidth increase for DRAM? © 2016 IEEE.

키워드

Bandwidth; Random access storage; Circuit levels; Data rates; Double data rate; Dynamic random access memory; Input/output; Memory interface; Memory wall; Synchronous drams; Dynamic random access storage
제목
Memory Interfaces: Past, Present, and Future
저자
Kim, C.; Lee, H.-W.; Song, J.
DOI
10.1109/MSSC.2016.2546659
발행일
2016
유형
Article
저널명
IEEE Solid-State Circuits Magazine
권
8
호
2
페이지
23 ~ 34