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초록
Over the last few decades, the bandwidth of dynamic random-access memory (DRAM) has increased significantly through innovative architectures and circuit-level techniques to overcome the well-known memory wall problem. We can understand the past challenges of DRAM input/output (I/O) by investigating the technologies utilized for DRAM I/O in the transition from single-data-rate (SDR) synchronous DRAM (SDRAM)to double-data-rate (DDR) SDRAM. Recently developed versions of low-power DDR four (LPDDR4) and synchronous graphics DDR five (GDDR5) employ new I/O features for further bandwidth increase. Looking beyond LPDDR4 and GDDR5, what should be done to make another jump in bandwidth increase for DRAM? © 2016 IEEE.
키워드
Bandwidth; Random access storage; Circuit levels; Data rates; Double data rate; Dynamic random access memory; Input/output; Memory interface; Memory wall; Synchronous drams; Dynamic random access storage
- 제목
- Memory Interfaces: Past, Present, and Future
- 저자
- Kim, C.; Lee, H.-W.; Song, J.
- 발행일
- 2016
- 유형
- Article
- 권
- 8
- 호
- 2
- 페이지
- 23 ~ 34
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 12 페이지
- ISSN
- E 1943-0590
P 1943-0582