Binarized Neural Network Comprising Quasi-Nonvolatile Memory Devices for Neuromorphic Computing

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초록

"This study presents a binarized neural network (BNN) comprising quasi-nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec−1) and a high on/off ratio (≥ 107). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply-accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector-matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high-performance neuromorphic computing. © 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.

키워드

binarized neural network; image recognition; multiply-accumulate; positive feedback loop; quasi-nonvolatile memory
제목
Binarized Neural Network Comprising Quasi-Nonvolatile Memory Devices for Neuromorphic Computing
저자
Shin, Yunwoo; Jeon, Juhee; Cho, Kyoungah; Kim, Sangsig
DOI
10.1002/aelm.202400061
발행일
2024-05
유형
Article; Early Access
저널명
Advanced Electronic Materials
권
10
호
9