PLASMA PARAMETERS AND COMPOSITION IN CF4/O-2/Ar GAS MIXTURE

초록

The effects of O-2/Ar mixing ratio in CF4/O-2/Ar mixture on both plasma parameters and fluxes of active species determining the dry etching kinetics in this gas system were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of Ar with O-2 at constant fraction of CF4 in a feed gas does not result in the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF4/O-2 gas mixtures. The mechanisms of this phenomenon as well as its possible impact on the etching/polymerization kinetics were discussed in details.

키워드